K4S56163LF-XZN Datasheet, Samsung semiconductor

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L M.

The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

K4S56163LF-XZC

K4S56163LF-XZE

K4S56163LF-XZF

K4S56163LF-XZG

K4S56163LF-XZL

K4S56163LF-XC

K4S56163LF-XE

K4S56163LF-XF

K4S56163LF-XG

K4S56163LF-XL

K4S56163LF-XN

K4S56163LC

K4S56163LC-RF